Nd:YVO4 is one of the most efficient laser host crystals for all-solid-state laser diode pumped lasers. Its large stimulated emission cross-section at lasing wavelength, high absorption coefficient and wide absorption bandwidth at pump wavelength, high laser induced damage threshold as well as good physical, optical and mechanical properties make it an excellent crystal for high power, stable and cost-effective diode pumped solid-state lasers With advanced technology on growing and manufacturing high optical quality Nd:YVO4 crystals, We can provide a wide variety of finished crystals.
Specifications of Nd:YVO4 Crystal:
| Nd+ Dopant | 0.2%,0.27%,0.4%,0.5%,1%,2%,3%, |
| Orientation: | A-cut( ± 0.5° ) |
| Dimension Tolerance: | +/-0.1mm |
| Wavefront Distortion: | <λ/8 at 633nm |
| Surface Quality: | 20/10 |
| Parallelism: | < 10 arc seconds |
| Perpendicularity: | < 5 arc minutes |
| Surface Flatness: | <λ/10 at 632.8nm |
| Clear Aperture: | Central 95% |
| Chamfer: | 0.15×45° |
| Coating: | 1.AR@1064nm R<0.1% 2.AR@1064nm R< 0.1% & HT@808nm T>95% 3.HR@1064nm R>99.8% & HR@532nm R>99% & HT@808nm T>95% |
Properties of Nd:YVO4 Crystal:
| Atomic Density | ~1.37×1020 atoms/cm2 |
| Crystal Structure | Zircon Tetragonal, space group D4h, a=b=7.12, c=6.29 |
| Density | 4.22 g/cm3 |
| Mohs Hardness | Glass-like, ~5 |
| Thermal Expansion Coefficient | aa=4.43×10-6/K, ac=11.37×10-6/K |
| Thermal Conductivity Coefficient | 5.23 W/m/K; ^C: 5.10 W/m/K |
| Lasing Wavelengths | 914nm, 1064 nm, 1342 nm |
| Crystal Class | positive uniaxial, no=na=nb ne=nc no=1.9573, ne=2.1652, @ 1064nm no=1.9721, ne=2.1858, @ 808nm no=2.0210, ne=2.2560, @ 532nm |
| Thermal Optical Coefficient | dna/dT=8.5×10-6/K, dnc/dT=3.0×10-6/K |
| Stimulated Emission Cross-Section | 25.0×10-19 cm2 , @1064 nm |
| Fluorescent Lifetime | 90 ms (about 50 ms for 2 atm% Nd doped) @ 808 nm |
| Absorption Coefficient | 31.4 cm-1 @ 808 nm |
| Absorption Length | 0.32 mm @ 808 nm |
| Intrinsic Loss | Less 0.1% cm-1 , @1064 nm |
| Gain Bandwidth | 0.96 nm (257 GHz) @ 1064 nm |
| Polarized Laser Emission | p parallel to optic axis (c-axis) |
| Diode Pumped Optical to Optical Efficiency | > 60% |
