NdYVO4 Crystal

• Lower lasing threshold and higher slope efficiency
• Large stimulated emission cross-section at lasing wavelength
• High absorption over a wide pumping wavelength bandwidth
• Optically uniaxial and large birefringence emit strongly-polarized laser


Nd:YVO4 is one of the most efficient laser host crystals for all-solid-state laser diode pumped lasers. Its large stimulated emission cross-section at lasing wavelength, high absorption coefficient and wide absorption bandwidth at pump wavelength, high laser induced damage threshold as well as good physical, optical and mechanical properties make it an excellent crystal for high power, stable and cost-effective diode pumped solid-state lasers With advanced technology on growing and manufacturing high optical quality Nd:YVO4 crystals, We can provide a wide variety of finished crystals.

Specifications of Nd:YVO4 Crystal:

Nd+ Dopant 0.2%,0.27%,0.4%,0.5%,1%,2%,3%,
Orientation: A-cut( ± 0.5° )
Dimension Tolerance: +/-0.1mm
Wavefront Distortion: <λ/8 at 633nm
Surface Quality: 20/10
Parallelism: < 10 arc seconds
Perpendicularity: < 5 arc minutes
Surface Flatness: <λ/10 at 632.8nm
Clear Aperture: Central 95%
Chamfer: 0.15×45°
Coating: 1.AR@1064nm R<0.1%
2.AR@1064nm R< 0.1% & HT@808nm T>95%
3.HR@1064nm R>99.8% & HR@532nm R>99% & HT@808nm T>95%

Properties of Nd:YVO4 Crystal:  

Atomic Density ~1.37×1020 atoms/cm2
Crystal Structure Zircon Tetragonal, space group D4h, a=b=7.12, c=6.29
Density 4.22 g/cm3
Mohs Hardness Glass-like, ~5
Thermal Expansion Coefficient aa=4.43×10-6/K, ac=11.37×10-6/K
Thermal Conductivity Coefficient 5.23 W/m/K; ^C: 5.10 W/m/K
Lasing Wavelengths 914nm, 1064 nm, 1342 nm
Crystal Class positive uniaxial, no=na=nb ne=nc
no=1.9573, ne=2.1652, @ 1064nm
no=1.9721, ne=2.1858, @ 808nm
no=2.0210, ne=2.2560, @ 532nm
Thermal Optical Coefficient dna/dT=8.5×10-6/K, dnc/dT=3.0×10-6/K
Stimulated Emission Cross-Section 25.0×10-19 cm2 , @1064 nm
Fluorescent Lifetime 90 ms (about 50 ms for 2 atm% Nd doped) @ 808 nm
Absorption Coefficient 31.4 cm-1 @ 808 nm
Absorption Length 0.32 mm @ 808 nm
Intrinsic Loss Less 0.1% cm-1 , @1064 nm
Gain Bandwidth 0.96 nm (257 GHz) @ 1064 nm
Polarized Laser Emission p parallel to optic axis (c-axis)
Diode Pumped Optical to Optical Efficiency > 60%